auf Bestellung 800000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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800+ | 1.19 EUR |
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Technische Details PSMN008-75B,118 Nexperia
Description: MOSFET N-CH 75V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 122.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V.
Weitere Produktangebote PSMN008-75B,118 nach Preis ab 2.13 EUR bis 4.73 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN008-75B,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 122.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V |
auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN008-75B,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 122.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V |
auf Bestellung 5703 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN008-75B,118 | Hersteller : Nexperia | MOSFET PSMN008-75B/SOT404/D2PAK |
auf Bestellung 3601 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN008-75B,118 | Hersteller : NEXPERIA | Trans MOSFET N-CH Si 75V 75A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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PSMN008-75B,118 | Hersteller : Nexperia | Trans MOSFET N-CH Si 75V 75A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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PSMN008-75B,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 240A; 230W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 75A Pulsed drain current: 240A Power dissipation: 230W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 122.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN008-75B,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 240A; 230W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 75A Pulsed drain current: 240A Power dissipation: 230W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 122.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |