auf Bestellung 2139 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 3.43 EUR |
| 18+ | 2.94 EUR |
| 100+ | 2.44 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.59 EUR |
| 5000+ | 1.52 EUR |
| 10000+ | 1.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN022-30PL,127 Nexperia
Description: MOSFET N-CH 30V 30A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V.
Weitere Produktangebote PSMN022-30PL,127 nach Preis ab 1.43 EUR bis 4.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSMN022-30PL,127 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 30A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V |
auf Bestellung 7982 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
PSMN022-30PL,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 125A Power dissipation: 41W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: THT Gate charge: 4.4nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
PSMN022-30PL,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 125A Power dissipation: 41W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: THT Gate charge: 4.4nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
PSMN022-30PL,127 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |