| Anzahl | Preis |
|---|---|
| 2+ | 2.11 EUR |
| 10+ | 1.75 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.41 EUR |
| 1000+ | 1.08 EUR |
| 5000+ | 1.03 EUR |
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Technische Details PSMN022-30PL,127 Nexperia
Description: MOSFET N-CH 30V 30A TO220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 41W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V.
Weitere Produktangebote PSMN022-30PL,127
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PSMN022-30PL,127 | Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 30A TO220ABDrive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PSMN022-30PL,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 30A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Description: MOSFET N-CH 30V 30A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH