PSMN038-100K,518 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Description: MOSFET N-CH 100V 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1332+ | 0.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN038-100K,518 Nexperia USA Inc.
Description: MOSFET N-CH 100V 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj), Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V, Power Dissipation (Max): 3.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V.
Weitere Produktangebote PSMN038-100K,518 nach Preis ab 0.39 EUR bis 0.39 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
---|---|---|---|---|---|---|---|---|---|
PSMN038-100K,518 | Hersteller : Nexperia | Trans MOSFET N-CH Si 100V 6.3A 8-Pin SO T/R |
auf Bestellung 5904 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||
PSMN038-100K,518 | Hersteller : Nexperia | Trans MOSFET N-CH Si 100V 6.3A 8-Pin SO T/R |
auf Bestellung 5904 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||
PSMN038-100K,518 | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN038-100K,518 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
||||||
PSMN038-100K,518 | Hersteller : NEXPERIA | Trans MOSFET N-CH Si 100V 6.3A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
||||||
PSMN038-100K,518 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V Power Dissipation (Max): 3.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V |
Produkt ist nicht verfügbar |
||||||
PSMN038-100K,518 | Hersteller : Nexperia | MOSFET TAPE13 MOSFET |
Produkt ist nicht verfügbar |