PSMN038-100K,518 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 466+ | 0.97 EUR |
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Technische Details PSMN038-100K,518 Nexperia USA Inc.
Description: MOSFET N-CH 100V 8SO, Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 3.5W (Tc).
Weitere Produktangebote PSMN038-100K,518
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN038-100K,518 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 8SO Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 3.5W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PSMN038-100K,518 | Nexperia |
MOSFET TAPE13 MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PSMN038-100K,518 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 8SO
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3.5W (Tc)
Description: MOSFET N-CH 100V 8SO
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3.5W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PSMN038-100K,518 |
|
Hersteller: Nexperia
MOSFET TAPE13 MOSFET
MOSFET TAPE13 MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH