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Technische Details PSMN038-100K,518 Nexperia
Description: MOSFET N-CH 100V 8SO, Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 3.5W (Tc).
Weitere Produktangebote PSMN038-100K,518 nach Preis ab 0.45 EUR bis 1.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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PSMN038-100K,518 | Nexperia |
 Trans MOSFET N-CH Si 100V 6.3A 8-Pin SO T/R |
auf Bestellung 5904 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN038-100K,518 | NEXPERIA |
Description: NEXPERIA - PSMN038-100K,518 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN038-100K,518 | Nexperia |
Trans MOSFET N-CH Si 100V 6.3A 8-Pin SO T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN038-100K,518 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 8SO Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V Power Dissipation (Max): 3.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN038-100K,518 |
|
Hersteller: Nexperia
Trans MOSFET N-CH Si 100V 6.3A 8-Pin SO T/R
Trans MOSFET N-CH Si 100V 6.3A 8-Pin SO T/R
auf Bestellung 5904 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 383+ | 0.45 EUR |
| PSMN038-100K,518 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - PSMN038-100K,518 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: NEXPERIA - PSMN038-100K,518 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1602+ | 0.75 EUR |
| PSMN038-100K,518 |
|
Hersteller: Nexperia
Trans MOSFET N-CH Si 100V 6.3A 8-Pin SO T/R
Trans MOSFET N-CH Si 100V 6.3A 8-Pin SO T/R
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 721+ | 0.9 EUR |
| 1000+ | 0.82 EUR |
| PSMN038-100K,518 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Description: MOSFET N-CH 100V 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 466+ | 1.15 EUR |