PSMN057-200P,127 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 200V 39A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 2657 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 198+ | 3.61 EUR |
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Technische Details PSMN057-200P,127 Nexperia USA Inc.
Description: MOSFET N-CH 200V 39A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V.
Weitere Produktangebote PSMN057-200P,127 nach Preis ab 2.49 EUR bis 3.79 EUR
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PSMN057-200P,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 39A Pulsed drain current: 156A Power dissipation: 250W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 729 Stücke: Lieferzeit 7-14 Tag (e) |
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PSMN057-200P,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 39A Pulsed drain current: 156A Power dissipation: 250W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 729 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN057-200P,127 | Hersteller : Nexperia |
Trans MOSFET N-CH Si 200V 39A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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PSMN057-200P,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH Si 200V 39A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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PSMN057-200P,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 200V 39A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V |
Produkt ist nicht verfügbar |
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PSMN057-200P,127 | Hersteller : Nexperia |
MOSFET PSMN057-200P/SOT78/SIL3P |
Produkt ist nicht verfügbar |