PSMN057-200P,127 NEXPERIA

Description: MOSFET N-CH 200V 39A TO220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB.