PSMN1R0-30YLDX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 2.24 EUR |
3000+ | 2.13 EUR |
7500+ | 2.05 EUR |
10500+ | 1.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN1R0-30YLDX Nexperia USA Inc.
Description: NEXPERIA - PSMN1R0-30YLDX - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 790 µohm, SOT-669, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 100A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 238W, Gate-Source-Schwellenspannung, max.: 1.75V, euEccn: NLR, Verlustleistung: 238W, Bauform - Transistor: SOT-669, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 790µohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 790µohm, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote PSMN1R0-30YLDX nach Preis ab 1.49 EUR bis 4.71 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN1R0-30YLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 255A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 255A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.15mΩ Mounting: SMD Gate charge: 121.35nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 949 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
PSMN1R0-30YLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 255A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 255A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.15mΩ Mounting: SMD Gate charge: 121.35nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 949 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
PSMN1R0-30YLDX | Hersteller : Nexperia | MOSFET PSMN1R0-30YLD/SOT669/LFPAK |
auf Bestellung 3791 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
PSMN1R0-30YLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V |
auf Bestellung 13686 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
PSMN1R0-30YLDX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN1R0-30YLDX - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 790 µohm, SOT-669, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 238W Gate-Source-Schwellenspannung, max.: 1.75V euEccn: NLR Verlustleistung: 238W Bauform - Transistor: SOT-669 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 790µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 790µohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1975 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
PSMN1R0-30YLDX | Hersteller : NEXPERIA | Trans MOSFET N-CH 30V 300A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |