PSMN2R0-60ES,127 NXP Semiconductors
Hersteller: NXP SemiconductorsDescription: NEXPERIA PSMN2R0-60ES - 120A, 60
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
auf Bestellung 7334 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 214+ | 3.36 EUR |
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Technische Details PSMN2R0-60ES,127 NXP Semiconductors
Description: MOSFET N-CH 60V 120A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V.
Weitere Produktangebote PSMN2R0-60ES,127 nach Preis ab 3.36 EUR bis 3.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
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PSMN2R0-60ES,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V |
auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN2R0-60ES,127 | Hersteller : Nexperia |
MOSFET N-Ch 60V 2.2 mOhms |
auf Bestellung 4194 Stücke: Lieferzeit 14-28 Tag (e) |
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| PSMN2R0-60ES,127 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 60V 120A I2PAK Packaging: Tube |
auf Bestellung 610 Stücke: Lieferzeit 21-28 Tag (e) |
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| PSMN2R0-60ES,127 | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN2R0-60ES,127 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (23-Jan-2024) |
auf Bestellung 7334 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R0-60ES,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) I2PAK Rail |
Produkt ist nicht verfügbar |