PSMN3R0-60BS,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8079 pF @ 30 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 4.5 EUR |
| 1600+ | 3.85 EUR |
| 2400+ | 3.63 EUR |
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Technische Details PSMN3R0-60BS,118 Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8079 pF @ 30 V.
Weitere Produktangebote PSMN3R0-60BS,118 nach Preis ab 3.8 EUR bis 7.72 EUR
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PSMN3R0-60BS,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8079 pF @ 30 V |
auf Bestellung 4780 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN3R0-60BS,118 | Hersteller : Nexperia |
MOSFET PSMN3R0-60BS/SOT404/D2PAK |
auf Bestellung 2291 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN3R0-60BS,118 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R |
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PSMN3R0-60BS,118 | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| PSMN3R0-60BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 824A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.21mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN3R0-60BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 824A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.21mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |