auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN3R0-60BS,118 Nexperia
Description: MOSFET N-CH 60V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8079 pF @ 30 V.
Weitere Produktangebote PSMN3R0-60BS,118 nach Preis ab 2.11 EUR bis 7.96 EUR
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PSMN3R0-60BS,118 | Hersteller : Nexperia |
 Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN3R0-60BS,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8079 pF @ 30 V |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN3R0-60BS,118 | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 5374 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN3R0-60BS,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8079 pF @ 30 V |
auf Bestellung 3835 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN3R0-60BS,118 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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PSMN3R0-60BS,118 | Hersteller : Nexperia |
MOSFETs PSMN3R0-60BS/SOT404/D2PAK |
Produkt ist nicht verfügbar |
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| PSMN3R0-60BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 824A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.21mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |