PSMN4R2-40VSHX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PSMN4R2-40VSH - DUAL N-CHANNEL 4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 85W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 98A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Description: PSMN4R2-40VSH - DUAL N-CHANNEL 4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 85W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 98A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 3.54 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN4R2-40VSHX Nexperia USA Inc.
Description: NEXPERIA - PSMN4R2-40VSHX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 98 A, 98 A, 0.0035 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 98A, Dauer-Drainstrom Id, p-Kanal: 98A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 40V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 98A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0035ohm, Verlustleistung, p-Kanal: 85W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: LFPAK56D, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0035ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 85W, Betriebstemperatur, max.: 175°C, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote PSMN4R2-40VSHX nach Preis ab 2.94 EUR bis 7.46 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PSMN4R2-40VSHX | Hersteller : Nexperia | MOSFET PSMN4R2-40VSH/SOT1205/LFPAK56D |
auf Bestellung 3565 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN4R2-40VSHX | Hersteller : Nexperia USA Inc. |
Description: PSMN4R2-40VSH - DUAL N-CHANNEL 4 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 85W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 98A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active |
auf Bestellung 2462 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN4R2-40VSHX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN4R2-40VSHX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 98 A, 98 A, 0.0035 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 98A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 98A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0035ohm Verlustleistung, p-Kanal: 85W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0035ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 85W Betriebstemperatur, max.: 175°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1454 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R2-40VSHX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN4R2-40VSHX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 98 A, 98 A, 0.0035 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 98A Dauer-Drainstrom Id, p-Kanal: 98A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 98A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0035ohm Verlustleistung, p-Kanal: 85W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0035ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 85W Betriebstemperatur, max.: 175°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1454 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R2-40VSHX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 69.5A; 85W Type of transistor: N-MOSFET x2 Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 69.5A Pulsed drain current: 393A Power dissipation: 85W Case: LFPAK56D; SOT1205 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN4R2-40VSHX | Hersteller : NEXPERIA | Trans MOSFET N-CH 40V 98A 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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PSMN4R2-40VSHX | Hersteller : Nexperia | Trans MOSFET N-CH 40V 98A 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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PSMN4R2-40VSHX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 69.5A; 85W Type of transistor: N-MOSFET x2 Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 69.5A Pulsed drain current: 393A Power dissipation: 85W Case: LFPAK56D; SOT1205 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |