PSMN5R6-60YLX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 25 V
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 1.17 EUR |
3000+ | 1.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN5R6-60YLX Nexperia USA Inc.
Description: NEXPERIA - PSMN5R6-60YLX - Leistungs-MOSFET, TrenchMOS, n-Kanal, 60 V, 100 A, 0.0047 ohm, SOT-669, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 100A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 167W, Gate-Source-Schwellenspannung, max.: 1.7V, euEccn: NLR, Verlustleistung: 167W, Bauform - Transistor: SOT-669, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0047ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0047ohm, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote PSMN5R6-60YLX nach Preis ab 1.05 EUR bis 2.68 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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PSMN5R6-60YLX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 25 V |
auf Bestellung 7840 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN5R6-60YLX | Hersteller : Nexperia | MOSFET PSMN5R6-60YL/SOT669/LFPAK |
auf Bestellung 162565 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN5R6-60YLX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN5R6-60YLX - Leistungs-MOSFET, TrenchMOS, n-Kanal, 60 V, 100 A, 0.0047 ohm, SOT-669, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 167W Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: SOT-669 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0047ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0047ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 1871 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN5R6-60YLX | Hersteller : NEXPERIA | Trans MOSFET N-CH 60V 100A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN5R6-60YLX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W Polarisation: unipolar Mounting: SMD Pulsed drain current: 405A Power dissipation: 167W Gate charge: 66.8nC Features of semiconductor devices: logic level Drain current: 72A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 16.3mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN5R6-60YLX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W Polarisation: unipolar Mounting: SMD Pulsed drain current: 405A Power dissipation: 167W Gate charge: 66.8nC Features of semiconductor devices: logic level Drain current: 72A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 16.3mΩ |
Produkt ist nicht verfügbar |