PSMN8R2-80YS,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 80V 82A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 40 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 1.55 EUR |
| 3000+ | 1.46 EUR |
| 7500+ | 1.39 EUR |
| 10500+ | 1.32 EUR |
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Technische Details PSMN8R2-80YS,115 Nexperia USA Inc.
Description: MOSFET N-CH 80V 82A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 40 V.
Weitere Produktangebote PSMN8R2-80YS,115 nach Preis ab 1.23 EUR bis 8.22 EUR
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PSMN8R2-80YS,115 | Hersteller : Nexperia |
MOSFET PSMN8R2-80YS/SOT669/LFPAK |
auf Bestellung 25255 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN8R2-80YS,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 82A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 40 V |
auf Bestellung 17250 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN8R2-80YS,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 82A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN8R2-80YS,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Pulsed drain current: 326A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1490 Stücke: Lieferzeit 7-14 Tag (e) |
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| PSMN8R2-80YS,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Pulsed drain current: 326A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1490 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN8R2-80YS,115 | Hersteller : Nexperia |
Транз. Пол. БМ N-MOSFET TSOT-669-5 Udss=80V; Id=82A; Pdmax=130W; Rds=0,0134 Ohm |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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