PSMN8R5-100ESQ NXP USA Inc.
Hersteller: NXP USA Inc.Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V
auf Bestellung 1274 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 486+ | 1.49 EUR |
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Technische Details PSMN8R5-100ESQ NXP USA Inc.
Description: NEXPERIA PSMN8R5-100ESQ - 100A,, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tj), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V.
Weitere Produktangebote PSMN8R5-100ESQ nach Preis ab 1.49 EUR bis 1.49 EUR
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PSMN8R5-100ESQ | Hersteller : Nexperia USA Inc. |
Description: NEXPERIA PSMN8R5-100ESQ - 100A, Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V |
auf Bestellung 36282 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN8R5-100ESQ | Hersteller : Nexperia |
MOSFET PSMN8R5-100ES/I2PAK/STANDARD M |
auf Bestellung 4990 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN8R5-100ESQ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) I2PAK Rail |
Produkt ist nicht verfügbar |