RFD15P05SM Fairchild/ON Semiconductor
Hersteller: Fairchild/ON Semiconductor
P-канальний ПТ; Udss, В = 50; Id = 15 А; Ciss, пФ @ Uds, В = 1150 @ 25; Qg, нКл = 150 @ 20 В; Rds = 150 мОм @ 15 A, 10 В; Ugs(th) = 4 В @ 250 мкА; Р, Вт = 80; Тексп, °C = -55...+175; Тип монт. = smd; D-PAK
P-канальний ПТ; Udss, В = 50; Id = 15 А; Ciss, пФ @ Uds, В = 1150 @ 25; Qg, нКл = 150 @ 20 В; Rds = 150 мОм @ 15 A, 10 В; Ugs(th) = 4 В @ 250 мкА; Р, Вт = 80; Тексп, °C = -55...+175; Тип монт. = smd; D-PAK
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 2.26 EUR |
10+ | 1.48 EUR |
100+ | 1.28 EUR |
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Technische Details RFD15P05SM Fairchild/ON Semiconductor
Description: MOSFET P-CH 50V 15A TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V.
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Description: MOSFET P-CH 50V 15A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V |
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