RFP2N10L
Hersteller: auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details RFP2N10L
Description: MOSFET N-CH 100V 2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.
Weitere Produktangebote RFP2N10L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RFP2N10L | Hersteller : onsemi |
Description: MOSFET N-CH 100V 2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFP2N10L | Hersteller : onsemi / Fairchild |
MOSFET TO-220AB N-Ch Power |
Produkt ist nicht verfügbar |