RFP2N10L
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auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details RFP2N10L
Description: MOSFET N-CH 100V 2A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote RFP2N10L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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RFP2N10L | onsemi |
Description: MOSFET N-CH 100V 2A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
RFP2N10L | onsemi / Fairchild |
MOSFET TO-220AB N-Ch Power |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RFP2N10L |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 2A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 2A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RFP2N10L |
|
Hersteller: onsemi / Fairchild
MOSFET TO-220AB N-Ch Power
MOSFET TO-220AB N-Ch Power
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH