RM110N150HD

RM110N150HD

Hersteller: Rectron USA
Description: MOSFET N-CH 150V 113A TO263-2
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 273W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4362pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 75V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount

Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)

Technische Details RM110N150HD

Description: MOSFET N-CH 150V 113A TO263-2, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 273W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4362pF @ 75V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 52nC @ 75V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 113A (Tc), Drain to Source Voltage (Vdss): 150V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: TO-263-2, Mounting Type: Surface Mount.

Preis RM110N150HD ab 0 EUR bis 0 EUR