RM120N30DF

RM120N30DF

RM120N30DF

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 120A 8DFN
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 30V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)

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Technische Details RM120N30DF

Description: MOSFET N-CHANNEL 30V 120A 8DFN, Package / Case: 8-PowerVDFN, Supplier Device Package: 8-DFN (5x6), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 75W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 72nC @ 30V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 2.35mOhm @ 60A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Manufacturer: Rectron USA, Packaging: Tape & Reel (TR).

Preis RM120N30DF ab 0 EUR bis 0 EUR