RM120N30T2

RM120N30T2

RM120N30T2

Hersteller: Rectron USA
Description: MOSFET N-CH 30V 120A TO220-3
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Ta)

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Technische Details RM120N30T2

Description: MOSFET N-CH 30V 120A TO220-3, FET Type: N-Channel, Part Status: Active, Packaging: Tube, Manufacturer: Rectron USA, Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), Package / Case: TO-220-3, Supplier Device Package: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 120W (Ta).

Preis RM120N30T2 ab 0 EUR bis 0 EUR