RM12N650IP

RM12N650IP

RM12N650IP

Hersteller: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO251
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube

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Technische Details RM12N650IP

Description: MOSFET N-CH 650V 11.5A TO251, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 101W (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.

Preis RM12N650IP ab 0 EUR bis 0 EUR