RM17N800HD

RM17N800HD

RM17N800HD

Hersteller: Rectron USA
Description: MOSFET N-CH 800V 17A TO263-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel

Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen

Technische Details RM17N800HD

Description: MOSFET N-CH 800V 17A TO263-2, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263-2, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 260W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), FET Type: N-Channel.

Preis RM17N800HD ab 0 EUR bis 0 EUR