RM18P100HDE

RM18P100HDE

Hersteller: Rectron USA
Description: MOSFET P-CH 100V 18A TO263-2
FET Type: P-Channel
Power Dissipation (Max): 70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 15V
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)

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Lieferzeit 21-28 Tag (e)

Technische Details RM18P100HDE

Description: MOSFET P-CH 100V 18A TO263-2, FET Type: P-Channel, Power Dissipation (Max): 70W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 61nC @ 15V, Part Status: Active, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 100mOhm @ 16A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: TO-263-2, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ).

Preis RM18P100HDE ab 0 EUR bis 0 EUR