RM2020ES9

RM2020ES9

RM2020ES9

Hersteller: Rectron USA
Description: MOSFET N&P-CH 20V SOT363
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW (Ta), 800mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 120pF @ 16V
Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 10V, 750pC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 800mA (Ta)
Drain to Source Voltage (Vdss): 20V

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Technische Details RM2020ES9

Description: MOSFET N&P-CH 20V SOT363, FET Feature: Standard, FET Type: N and P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Rectron USA, Supplier Device Package: SOT-363, Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 150mW (Ta), 800mW (Ta), Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 120pF @ 16V, Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 10V, 750pC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 800mA (Ta), Drain to Source Voltage (Vdss): 20V.

Preis RM2020ES9 ab 0 EUR bis 0 EUR