RM20N60LD

RM20N60LD

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 20A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)

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auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)

Technische Details RM20N60LD

Description: MOSFET N-CHANNEL 60V 20A TO252-2, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: TO-252-2, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 45W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 47nC @ 50V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 60V, Packaging: Tape & Reel (TR).

Preis RM20N60LD ab 0 EUR bis 0 EUR