RM21N700TI

RM21N700TI

RM21N700TI

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 700V 21A TO220F
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 190mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 700V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 34W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 50V
Package / Case: TO-220-3 Full Pack

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Technische Details RM21N700TI

Description: MOSFET N-CHANNEL 700V 21A TO220F, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Rds On (Max) @ Id, Vgs: 190mOhm @ 10.5A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Drain to Source Voltage (Vdss): 700V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tube, Manufacturer: Rectron USA, Supplier Device Package: TO-220F, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 34W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 50V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 70nC @ 50V, Package / Case: TO-220-3 Full Pack.

Preis RM21N700TI ab 0 EUR bis 0 EUR