RM2520ES6

RM2520ES6

RM2520ES6

Hersteller: Rectron USA
Description: MOSFET N&P-CH 25/20V SOT23-6
Manufacturer: Rectron USA
Supplier Device Package: SOT-23-6
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 800mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 30pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 4.5V, 0.6pC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 600mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Drain to Source Voltage (Vdss): 25V, 20V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)

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auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)

Technische Details RM2520ES6

Description: MOSFET N&P-CH 25/20V SOT23-6, Manufacturer: Rectron USA, Supplier Device Package: SOT-23-6, Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 800mW (Ta), Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 30pF @ 10V, Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 4.5V, 0.6pC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 600mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta), Drain to Source Voltage (Vdss): 25V, 20V, FET Feature: Standard, FET Type: N and P-Channel, Part Status: Active, Packaging: Tape & Reel (TR).

Preis RM2520ES6 ab 0 EUR bis 0 EUR