RM25C256C-LSNI-B Dialog Semiconductor
Hersteller: Dialog SemiconductorEEPROM Serial-SPI 256K-bit 512Pagesx512 1.8V/2.5V/3.3V 8-Pin SOIC N Tube
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details RM25C256C-LSNI-B Dialog Semiconductor
Description: IC CBRAM 256KBIT SPI 10MHZ 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Memory Size: 256Kbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: CBRAM, Clock Frequency: 10 MHz, Memory Format: CBRAM®, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Write Cycle Time - Word, Page: 100µs, 5ms, Memory Interface: SPI, Memory Organization: 64 Bytes Page Size, DigiKey Programmable: Not Verified.
Weitere Produktangebote RM25C256C-LSNI-B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| RM25C256C-LSNI-B | Hersteller : Dialog Semiconductor |
EEPROM Serial-SPI 256K-bit 512Pagesx512 1.8V/2.5V/3.3V 8-Pin SOIC N Tube |
Produkt ist nicht verfügbar |
||
.jpg "RM25C256C-LSNI-B") |
RM25C256C-LSNI-B | Hersteller : Renesas Electronics Corporation |
Description: IC CBRAM 256KBIT SPI 10MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: CBRAM Clock Frequency: 10 MHz Memory Format: CBRAM® Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 100µs, 5ms Memory Interface: SPI Memory Organization: 64 Bytes Page Size DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
|
 |
RM25C256C-LSNI-B | Hersteller : Adesto Technologies |
EEPROM 256K 1.65V EEPROM |
Produkt ist nicht verfügbar |