RM25C512C-LSNI-T Dialog Semiconductor
Hersteller: Dialog SemiconductorEEPROM Serial-SPI 512K-bit 512Pages x 128 1.8V/2.5V/3.3V 8-Pin SOIC N T/R
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Technische Details RM25C512C-LSNI-T Dialog Semiconductor
Description: IC CBRAM 512KBIT SPI 20MHZ 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Memory Size: 512Kbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: CBRAM, Clock Frequency: 20 MHz, Memory Format: CBRAM®, Supplier Device Package: 8-SOIC, Write Cycle Time - Word, Page: 100µs, 5ms, Memory Interface: SPI, Memory Organization: 128 Bytes Page Size, DigiKey Programmable: Not Verified.
Weitere Produktangebote RM25C512C-LSNI-T
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RM25C512C-LSNI-T | Hersteller : Renesas Electronics Corporation |
Description: IC CBRAM 512KBIT SPI 20MHZ 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: CBRAM Clock Frequency: 20 MHz Memory Format: CBRAM® Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 100µs, 5ms Memory Interface: SPI Memory Organization: 128 Bytes Page Size DigiKey Programmable: Not Verified |
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RM25C512C-LSNI-T | Hersteller : Renesas Electronics Corporation |
Description: IC CBRAM 512KBIT SPI 20MHZ 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: CBRAM Clock Frequency: 20 MHz Memory Format: CBRAM® Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 100µs, 5ms Memory Interface: SPI Memory Organization: 128 Bytes Page Size DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| RM25C512C-LSNI-T | Hersteller : Adesto Technologies |
EEPROM 512K 1.65V EEPROM |
Produkt ist nicht verfügbar |