Technische Details RM25C64C-LSNI-B Adesto Technologies
Description: IC CBRAM 64KBIT SPI 10MHZ 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Memory Size: 64Kbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: CBRAM, Clock Frequency: 10 MHz, Memory Format: CBRAM®, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Write Cycle Time - Word, Page: 100µs, 5ms, Memory Interface: SPI, Memory Organization: 32 Bytes Page Size, DigiKey Programmable: Not Verified.
Weitere Produktangebote RM25C64C-LSNI-B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| RM25C64C-LSNI-B | Hersteller : Dialog Semiconductor |
 EEPROM Serial-SPI 64K-bit 256Pages x 32 1.8V/2.5V/3.3V 8-Pin SOIC N Tube |
Produkt ist nicht verfügbar |
||
| RM25C64C-LSNI-B | Hersteller : Dialog Semiconductor |
EEPROM Serial-SPI 64K-bit 256Pages x 32 1.8V/2.5V/3.3V 8-Pin SOIC N Tube |
Produkt ist nicht verfügbar |
||
 |
RM25C64C-LSNI-B | Hersteller : Renesas Electronics Corporation |
Description: IC CBRAM 64KBIT SPI 10MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: CBRAM Clock Frequency: 10 MHz Memory Format: CBRAM® Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 100µs, 5ms Memory Interface: SPI Memory Organization: 32 Bytes Page Size DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |