RM2A8N60S4

RM2A8N60S4

Hersteller: Rectron USA
Description: MOSFET N-CH 60V 2.8A SOT223-3
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drain to Source Voltage (Vdss): 60V

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auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)

Technische Details RM2A8N60S4

Description: MOSFET N-CH 60V 2.8A SOT223-3, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Supplier Device Package: SOT-223-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.5W (Ta), Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 25V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Drain to Source Voltage (Vdss): 60V.

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