Produkte > RECTRON USA > RM40N200TI
RM40N200TI

RM40N200TI Rectron USA


rm40n200ti.pdf Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 200V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details RM40N200TI Rectron USA

Description: MOSFET N-CHANNEL 200V 40A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 41mOhm @ 20A, 10V, Power Dissipation (Max): 60W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V.