RM40N200TI

RM40N200TI

RM40N200TI

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 200V 40A TO220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Ta)
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 163nC @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 41mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA

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Technische Details RM40N200TI

Description: MOSFET N-CHANNEL 200V 40A TO220F, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 60W (Ta), Package / Case: TO-220-3 Full Pack, Supplier Device Package: TO-220F, Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 163nC @ 25V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 41mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Drain to Source Voltage (Vdss): 200V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tube, Manufacturer: Rectron USA.

Preis RM40N200TI ab 0 EUR bis 0 EUR