RM4N650LD

RM4N650LD

RM4N650LD

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO252-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel

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Technische Details RM4N650LD

Description: MOSFET N-CHANNEL 650V 4A TO252-2, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252-2, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel.

Preis RM4N650LD ab 0 EUR bis 0 EUR