RM60N100DF

RM60N100DF

RM60N100DF

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 100V 60A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 50 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tape & Reel (TR)

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Technische Details RM60N100DF

Description: MOSFET N-CHANNEL 100V 60A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 50 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Power Dissipation (Max): 105W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Part Status: Active, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Packaging: Tape & Reel (TR).

Preis RM60N100DF ab 0 EUR bis 0 EUR