RM6N800HD

RM6N800HD

RM6N800HD

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO263-2
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Technische Details RM6N800HD

Description: MOSFET N-CHANNEL 800V 6A TO263-2, Manufacturer: Rectron USA, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V, Power Dissipation (Max): 98W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: TO-263-2, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Preis RM6N800HD ab 0 EUR bis 0 EUR