RM75N60T2

RM75N60T2

RM75N60T2

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 75A TO220-3
Manufacturer: Rectron USA
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole

Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen

Technische Details RM75N60T2

Description: MOSFET N-CHANNEL 60V 75A TO220-3, Manufacturer: Rectron USA, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 110W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 50V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tube, Package / Case: TO-220-3, Supplier Device Package: TO-220-3, Mounting Type: Through Hole.

Preis RM75N60T2 ab 0 EUR bis 0 EUR