RM7N600IP

RM7N600IP

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 600V 7A TO251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tube
Part Status: Active

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auf Bestellung 1000000 Stücke
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Technische Details RM7N600IP

Description: MOSFET N-CHANNEL 600V 7A TO251, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 63W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Package / Case: TO-251-3 Stub Leads, IPak, Supplier Device Package: TO-251, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Packaging: Tube, Part Status: Active.

Preis RM7N600IP ab 0 EUR bis 0 EUR