RM7N600LD

RM7N600LD

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 600V 7A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 25V
Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tube
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)

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auf Bestellung 1000000 Stücke
Lieferzeit 21-28 Tag (e)

Technische Details RM7N600LD

Description: MOSFET N-CHANNEL 600V 7A TO252-2, Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 25V, Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Packaging: Tube, Part Status: Active, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: TO-252-2, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 63W (Tc).

Preis RM7N600LD ab 0 EUR bis 0 EUR