RMA7N20ED1

RMA7N20ED1

RMA7N20ED1

Hersteller: Rectron USA
Description: MOSFET N-CH 20V 700MA DFN1006-3
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 550mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA

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Technische Details RMA7N20ED1

Description: MOSFET N-CH 20V 700MA DFN1006-3, Package / Case: SC-101, SOT-883, Supplier Device Package: DFN1006-3, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Power Dissipation (Max): 550mW (Ta), Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V, Vgs (Max): ±8V, Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Rectron USA.

Preis RMA7N20ED1 ab 0 EUR bis 0 EUR