RMA7N20ED1 Rectron USA
Hersteller: Rectron USADescription: MOSFET N-CH 20V 700MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
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Technische Details RMA7N20ED1 Rectron USA
Description: MOSFET N-CH 20V 700MA DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V, Power Dissipation (Max): 550mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.