RMP3N90LD
RMP3N90LD
Hersteller: Rectron USADescription: MOSFET N-CHANNEL 900V 3A TO252-2
Manufacturer: Rectron USA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
Part Status: Active
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 25V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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Technische Details RMP3N90LD
Description: MOSFET N-CHANNEL 900V 3A TO252-2, Manufacturer: Rectron USA, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: TO-252-2, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 50W (Tc), Part Status: Active, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 25V, Vgs(th) (Max) @ Id: 5V @ 250µA, Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Drain to Source Voltage (Vdss): 900V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel.