RS2JHE3_A/I Vishay General Semiconductor
auf Bestellung 39 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
49+ | 1.06 EUR |
57+ | 0.92 EUR |
100+ | 0.64 EUR |
500+ | 0.5 EUR |
1000+ | 0.4 EUR |
2500+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RS2JHE3_A/I Vishay General Semiconductor
Description: DIODE GEN PURP 600V 1.5A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Capacitance @ Vr, F: 17pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Qualification: AEC-Q101.
Weitere Produktangebote RS2JHE3_A/I
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
RS2JHE3_A/I | Hersteller : Vishay | Diode Switching 600V 1.5A Automotive 2-Pin SMB T/R |
Produkt ist nicht verfügbar |
||
RS2JHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.5A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |