RS2JHE3_A/I Vishay General Semiconductor
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.28 EUR |
| 2500+ | 0.23 EUR |
| 9600+ | 0.22 EUR |
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Technische Details RS2JHE3_A/I Vishay General Semiconductor
Description: DIODE STANDARD 600V 1.5A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Capacitance @ Vr, F: 17pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RS2JHE3_A/I
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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RS2JHE3_A/I | Hersteller : Vishay |
 Diode Switching 600V 1.5A Automotive 2-Pin SMB T/R |
Produkt ist nicht verfügbar |
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RS2JHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1.5A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |