RSR025N03HZGTL ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFET Automotive Nch 30V 2.5A Small Signal MOSFET. RSR025N03HZG is a MOSFET with low on - resistance, suitable for switching.
auf Bestellung 5867 Stücke:
Lieferzeit 185-189 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1 EUR |
| 10+ | 0.87 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.36 EUR |
| 9000+ | 0.32 EUR |
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Technische Details RSR025N03HZGTL ROHM Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RSR025N03HZGTL nach Preis ab 0.38 EUR bis 1 EUR
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RSR025N03HZGTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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| RSR025N03HZGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 30V Drain current: 2.5A On-state resistance: 0.118Ω Type of transistor: N-MOSFET Power dissipation: 1W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RSR025N03HZGTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| RSR025N03HZGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 30V Drain current: 2.5A On-state resistance: 0.118Ω Type of transistor: N-MOSFET Power dissipation: 1W |
Produkt ist nicht verfügbar |