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SI1016X-T1-GE3

SI1016X-T1-GE3 Vishay Siliconix


si1016x.pdf Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.485A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
6000+ 0.23 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 3000
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Technische Details SI1016X-T1-GE3 Vishay Siliconix

Description: MOSFET N/P-CH 20V 0.485A SC89, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA, Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-89 (SOT-563F), Part Status: Active.

Weitere Produktangebote SI1016X-T1-GE3 nach Preis ab 0.21 EUR bis 0.72 EUR

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SI1016X-T1-GE3 SI1016X-T1-GE3 Hersteller : Vishay si1016x.pdf Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R
auf Bestellung 2349 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
434+0.35 EUR
436+ 0.33 EUR
516+ 0.27 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 434
SI1016X-T1-GE3 SI1016X-T1-GE3 Hersteller : Vishay Siliconix si1016x.pdf Description: MOSFET N/P-CH 20V 0.485A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 15857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
29+ 0.61 EUR
100+ 0.43 EUR
500+ 0.33 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 25
SI1016X-T1-GE3 SI1016X-T1-GE3 Hersteller : Vishay Semiconductors si1016x.pdf MOSFETs N/P-Ch MOSFET 700/1200 mohms@4.5V
auf Bestellung 1547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.72 EUR
10+ 0.62 EUR
100+ 0.43 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
3000+ 0.23 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 4
SI1016X-T1-GE3 SI1016X-T1-GE3 Hersteller : Vishay si1016x.pdf Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R
Produkt ist nicht verfügbar
SI1016X-T1-GE3 SI1016X-T1-GE3 Hersteller : Vishay si1016x.pdf Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R
Produkt ist nicht verfügbar
SI1016X-T1-GE3 SI1016X-T1-GE3 Hersteller : Vishay si1016x.pdf Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R
Produkt ist nicht verfügbar
SI1016X-T1-GE3 Hersteller : VISHAY si1016x.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 515/-390mA
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7/1.25Ω
Mounting: SMD
Gate charge: 1.5/0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1016X-T1-GE3 Hersteller : VISHAY si1016x.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 515/-390mA
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7/1.25Ω
Mounting: SMD
Gate charge: 1.5/0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar