SI1016X-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.485A SC89
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.23 EUR |
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Technische Details SI1016X-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.485A SC89, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SC-89 (SOT-563F), Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V, Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 250mW, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote SI1016X-T1-GE3 nach Preis ab 0.21 EUR bis 1.14 EUR
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SI1016X-T1-GE3 | Vishay Semiconductors |
MOSFETs N/P-Ch MOSFET 700/1200 mohms@4.5V |
auf Bestellung 1547 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1016X-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 0.485A SC89 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89 (SOT-563F) Part Status: Active |
auf Bestellung 12628 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI1016X-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs N/P-Ch MOSFET 700/1200 mohms@4.5V
MOSFETs N/P-Ch MOSFET 700/1200 mohms@4.5V
auf Bestellung 1547 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.72 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.23 EUR |
| 9000+ | 0.21 EUR |
| SI1016X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.485A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
Description: MOSFET N/P-CH 20V 0.485A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 12628 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.14 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.31 EUR |