SI1016X-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N/P-CH 20V 0.485A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.25 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.22 EUR |
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Technische Details SI1016X-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.485A SC89, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA, Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-89 (SOT-563F), Part Status: Active.
Weitere Produktangebote SI1016X-T1-GE3 nach Preis ab 0.22 EUR bis 0.74 EUR
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SI1016X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R |
auf Bestellung 2349 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1016X-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET N/P-Ch MOSFET 700/1200 mohms@4.5V |
auf Bestellung 32617 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1016X-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V 0.485A SC89 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89 (SOT-563F) Part Status: Active |
auf Bestellung 24503 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1016X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R |
Produkt ist nicht verfügbar |
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SI1016X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R |
Produkt ist nicht verfügbar |
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SI1016X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R |
Produkt ist nicht verfügbar |
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| SI1016X-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -390/515mA Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20/20V Drain current: -390/515mA Pulsed drain current: -0.65...0.65A Power dissipation: 0.28W Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 2.7/1.25Ω Mounting: SMD Gate charge: 1.5nC/750pC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI1016X-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -390/515mA Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20/20V Drain current: -390/515mA Pulsed drain current: -0.65...0.65A Power dissipation: 0.28W Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 2.7/1.25Ω Mounting: SMD Gate charge: 1.5nC/750pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |