SI1024X-T1-GE3

SI1024X-T1-GE3

Hersteller: VHY

71170.pdf 71170.pdf
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Technische Details SI1024X-T1-GE3

Description: MOSFET 2N-CH 20V 0.485A SC89-6, Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 485mA, Drain to Source Voltage (Vdss): 20V, FET Feature: Logic Level Gate, FET Type: 2 N-Channel (Dual), Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SI1024, Supplier Device Package: SC-89-6, Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 250mW, Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA.

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SI1024X-T1-GE3
SI1024X-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET Dual N-Ch MOSFET 20V 700 mohms @ 4.5V
71170-241052.pdf
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Lieferzeit 14-28 Tag (e)
SI1024X-T1-GE3
SI1024X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.485A SC89-6
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Base Part Number: SI1024
71170.pdf
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SI1024X-T1-GE3
SI1024X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.485A SC89-6
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1024
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
71170.pdf
auf Bestellung 39677 Stücke
Lieferzeit 21-28 Tag (e)
SI1024X-T1-GE3
SI1024X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.485A SC89-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Base Part Number: SI1024
71170.pdf
auf Bestellung 7055 Stücke
Lieferzeit 21-28 Tag (e)