SI1032R-T1-GE3

SI1032R-T1-GE3

Hersteller: VISHAY
Material: SI1032R-T1-GE3 SMD N channel transistors
si1032r.pdf si1032r.pdf
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Technische Details SI1032R-T1-GE3

Description: MOSFET N-CH 20V 140MA SC75A, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 140mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V, Vgs (Max): ±6V, Power Dissipation (Max): 250mW (Ta), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: SC-75A, Package / Case: SC-75, SOT-416, Base Part Number: SI1032.

Preis SI1032R-T1-GE3 ab 0 EUR bis 0 EUR

SI1032R-T1-GE3
SI1032R-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 20V 0.14A 3-Pin SC-75A T/R
si1032r.pdf
18000 Stücke
SI1032R-T1-GE3
Hersteller: VISHAY
Material: SI1032R-T1-GE3 SMD N channel transistors
si1032r.pdf si1032r.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1032R-T1-GE3
SI1032R-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 20V 200mA 280mW 5.0ohm @ 4.5V
VISH_S_A0001468977_1-2567404.pdf
auf Bestellung 10585 Stücke
Lieferzeit 14-28 Tag (e)
SI1032R-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 20V 200mA 280mW 5.0ohm @ 4.5V
si1032r-279966.pdf
auf Bestellung 4518 Stücke
Lieferzeit 14-28 Tag (e)
SI1032R-T1-GE3
SI1032R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 140MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1032
si1032r.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1032R-T1-GE3
SI1032R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 140MA SC-75A
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
si1032r.pdf
auf Bestellung 67755 Stücke
Lieferzeit 21-28 Tag (e)
SI1032R-T1-GE3
SI1032R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 140MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1032
si1032r.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen