SI1050X-T1-GE3
SI1050X-T1-GE3
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 8V 1.34A SC89-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Technische Details SI1050X-T1-GE3
Description: MOSFET N-CH 8V 1.34A SC-89-6, Package / Case: SOT-563, SOT-666, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Supplier Device Package: SC-89-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 236mW (Ta), Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V, Vgs (Max): ±5V, Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta), Drain to Source Voltage (Vdss): 8V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active.
Preis SI1050X-T1-GE3 ab 0.49 EUR bis 1.38 EUR
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 8V 1.34A SC89-6 Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V Drain to Source Voltage (Vdss): 8 V Vgs (Max): ±5V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SC-89 (SOT-563F) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 236mW (Ta) Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT)
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auf Bestellung 3092 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Trans MOSFET N-CH 8V 1.34A 6-Pin SC-89 T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Semiconductors MOSFET 8V Vds 5V Vgs SC89-6
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auf Bestellung 9000 Stücke Lieferzeit 14-28 Tag (e) |
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SI1050X-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 8V 1.34A 6-Pin SC-89 T/R
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auf Bestellung 44 Stücke Lieferzeit 14-21 Tag (e) |
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SI1050X-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 8V 1.34A 6-Pin SC-89 T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 8V 1.34A SC-89-6 Package / Case: SOT-563, SOT-666 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: SC-89-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 236mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V Vgs (Max): ±5V Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta) Drain to Source Voltage (Vdss): 8V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active
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auf Bestellung 12427 Stücke Lieferzeit 21-28 Tag (e) |
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