SI1050X-T1-GE3

SI1050X-T1-GE3

SI1050X-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC89-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V

si1050x.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.49 EUR

Technische Details SI1050X-T1-GE3

Description: MOSFET N-CH 8V 1.34A SC-89-6, Package / Case: SOT-563, SOT-666, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Supplier Device Package: SC-89-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 236mW (Ta), Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V, Vgs (Max): ±5V, Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta), Drain to Source Voltage (Vdss): 8V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active.

Preis SI1050X-T1-GE3 ab 0.49 EUR bis 1.38 EUR

SI1050X-T1-GE3
SI1050X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
si1050x.pdf
auf Bestellung 3092 Stücke
Lieferzeit 21-28 Tag (e)
19+ 1.38 EUR
22+ 1.19 EUR
100+ 0.89 EUR
500+ 0.7 EUR
1000+ 0.54 EUR
SI1050X-T1-GE3
SI1050X-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 8V 1.34A 6-Pin SC-89 T/R
si1050x.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1050X-T1-GE3
SI1050X-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 8V Vds 5V Vgs SC89-6
VISH_S_A0001122319_1-2567195.pdf
auf Bestellung 9000 Stücke
Lieferzeit 14-28 Tag (e)
SI1050X-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 8V 1.34A 6-Pin SC-89 T/R
si1050x.pdf si1050x.pdf
auf Bestellung 44 Stücke
Lieferzeit 14-21 Tag (e)
SI1050X-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 8V 1.34A 6-Pin SC-89 T/R
si1050x.pdf si1050x.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1050X-T1-GE3
SI1050X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC-89-6
Package / Case: SOT-563, SOT-666
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SC-89-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 236mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
si1050x.pdf
auf Bestellung 12427 Stücke
Lieferzeit 21-28 Tag (e)