SI1050X-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 8V 1.34A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
auf Bestellung 54000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.47 EUR |
| 6000+ | 0.44 EUR |
| 15000+ | 0.41 EUR |
| 30000+ | 0.38 EUR |
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Technische Details SI1050X-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC89-6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta), Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V, Power Dissipation (Max): 236mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SC-89 (SOT-563F), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V.
Weitere Produktangebote SI1050X-T1-GE3 nach Preis ab 0.41 EUR bis 1.33 EUR
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SI1050X-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 8V Vds 5V Vgs SC89-6 |
auf Bestellung 5917 Stücke: Lieferzeit 14-28 Tag (e) |
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SI1050X-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 8V 1.34A SC89-6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta) Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V Power Dissipation (Max): 236mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SC-89 (SOT-563F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V |
auf Bestellung 58940 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1050X-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI1050X-T1-GE3 - Leistungs-MOSFET, n-Kanal, 8 V, 1.34 A, 0.12 ohm, SC-89, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 8 Dauer-Drainstrom Id: 1.34 Qualifikation: - Verlustleistung Pd: 236 Gate-Source-Schwellenspannung, max.: 350 Verlustleistung: 236 Bauform - Transistor: SC-89 Anzahl der Pins: 6 Produktpalette: Trench Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.12 Rds(on)-Prüfspannung: 1.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.12 SVHC: No SVHC (19-Jan-2021) |
auf Bestellung 16325 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1050X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 1.34A 6-Pin SC-89 T/R |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI1050X-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI1050X-T1-GE3 - Leistungs-MOSFET, n-Kanal, 8 V, 1.34 A, 0.12 ohm, SC-89, Oberflächenmontage Verlustleistung: 236 Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.12 Qualifikation: - SVHC: No SVHC (19-Jan-2021) |
auf Bestellung 16325 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI1050X-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 1.34A; Idm: 6A Mounting: SMD Case: SC89; SOT563 Kind of package: reel; tape Power dissipation: 236mW Polarisation: unipolar Gate charge: 11.6nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 6A Drain-source voltage: 8V Drain current: 1.34A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI1050X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 1.34A 6-Pin SC-89 T/R |
Produkt ist nicht verfügbar |
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 |
SI1050X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 1.34A 6-Pin SC-89 T/R |
Produkt ist nicht verfügbar |
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| SI1050X-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 1.34A; Idm: 6A Mounting: SMD Case: SC89; SOT563 Kind of package: reel; tape Power dissipation: 236mW Polarisation: unipolar Gate charge: 11.6nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 6A Drain-source voltage: 8V Drain current: 1.34A On-state resistance: 0.12Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |